[A] Introduction to compound semiconductor engineering for various applications
Compound semiconductors form the most (or many) of fundamental materials in modern optoelectronics/electronic devices, micro- and nano-structures as well as their modules in advanced electronic and optoelectronic systems. Characterization is the key step to produce these advanced materials, no matter what they are made by bulk growth, deposition, epitaxy or any types of material growth techniques. The identification via various characterization technologies, not by only one or few ones is really necessary. Various techniques, basic and advanced, are introduced in this course.
[B] Structure characterization
B1-X-ray diffraction (XRD): basic theory-Bragg Law, history developments, Powder XRD, double crystal XRD, high resolution XRD (via 3-5 crystals), Reciprocal maps, XRD fitting programs for single and multiple layers as well as quantum well (QW) or superlattice (SL) structures.
B2-Electron microscopy: scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution (HR) TEM.
[C] Electrical Characterization: Hall effect and measurement of resistivity and carrier concentration, IV and CV, electrochemical etching CV depth profile
[D] Optical Characterization: optical transmission (OT), optical reflectance (OR), Photoluminescence (PL), Photoluminescence excitation (PLE), time resolved (TR) PL, Raman scattering (RS), Fourier transform infrared (FTIR) spectroscopy, Photoreflectance (PR), electroreflectance (ER), Electronluminescence (EL), cathodoluminescence (CL), low-temperature (LT) and high-T systems and application to all optical characterization techniques.
[E] Surface science Characterization: X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), depth profile measurements.
[F] Nuclear technological Characterization: Rutherford backscattering (RBS), ion channeling, PIXS.
[G] Synchrotron radiation (SR) technological Characterization: high